GROWTH OF HG1-XZNXTE BY MOLECULAR-BEAM EPITAXY ON A GAAS (100) SUBSTRATE

被引：18

作者：

SIVANANTHAN, S

CHU, X

BOUKERCHE, M

FAURIE, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1291 / 1293

页数：3

共 8 条

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[3] CHARACTERIZATION OF CDXHG1-XTE P-TYPE LAYERS GROWN BY MBE [J].

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[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES [J].

FAURIE, JP ;

SIVANANTHAN, S ;

BOUKERCHE, M ;

RENO, J .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1307-1309

[5]

FAURIE JP, 1964, J APPL PHYS, V35, P1306

[6] MERCURY ZINC TELLURIDE, A NEW NARROW-GAP SEMICONDUCTOR [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (01) :59-61

[7] EFFECTS INFLUENCING THE STRUCTURAL INTEGRITY OF SEMICONDUCTORS AND THEIR ALLOYS [J].

SHER, A ;

CHEN, AB ;

SPICER, WE ;

SHIH, CK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :105-111

[8] BAND-GAP VARIATION AND LATTICE, SURFACE, AND INTERFACE INSTABILITIES IN HG1-XCDXTE AND RELATED-COMPOUNDS [J].

SPICER, WE ;

SILBERMAN, JA ;

LINDAU, I ;

CHEN, AB ;

SHER, A ;

WILSON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1735-1743

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