EFFECT OF NITRIDATION OF SILICON DIOXIDE ON ITS INFRARED-SPECTRUM

被引：71

作者：

NAIMAN, ML ^{[1
]}

KIRK, CT ^{[1
]}

AUCOIN, RJ ^{[1
]}

TERRY, FL ^{[1
]}

WYATT, PW ^{[1
]}

SENTURIA, SD ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

关键词：

D O I：

10.1149/1.2115648

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：637 / 640

页数：4

共 17 条

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[6] NITRIDATION OF SILICON AND OXIDIZED-SILICON
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[7] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
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[8] LATTICE ABSORPTION BANDS IN SILICON
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[9] Naiman M. L., 1980, International Electron Devices Meeting. Technical Digest, P562
[10] PHILLIP HR, 1953, J APPL PHYS, V50, P1053