INFLUENCE OF SLIGHT DEVIATIONS FROM TASI2 STOICHIOMETRY ON THE HIGH-TEMPERATURE STABILITY OF TANTALUM SILICIDE SILICON CONTACTS

被引：13

作者：

OPPOLZER, H

NEPPL, F

HIEBER, K

HUBER, V

机构：

[1] Siemens AG, Research Lab, Munich,, West Ger, Siemens AG, Research Lab, Munich, West Ger

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：630 / 635

页数：6

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[9]

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[10]

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