X-RAY OBSERVATION OF CONVERSION OF FAULTED LOOPS TO PRISMATIC LOOPS IN SILICON

被引：6

作者：

KAWADO, S ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA 240,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 05期

关键词：

D O I：

10.1143/JJAP.15.917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 918

页数：2

共 10 条

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[7] GENERATION OF STACKING-FAULTS AND PRISMATIC DISLOCATION LOOPS IN DEVICE-PROCESSED SILICON WAFERS [J].

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[8]

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[9] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

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[10] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON [J].

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