METALORGANIC MOLECULAR-BEAM EPITAXY OF GAMMA-AL2O3 INSULATOR FILMS ON SI WITH LASER IRRADIATION

被引：9

作者：

SAWADA, K ^{[1
]}

ISHIDA, M ^{[1
]}

NAKAMURA, T ^{[1
]}

SUZAKI, T ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90451-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：494 / 499

页数：6

共 23 条

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[7] DEPOSITION OF A SI MONOLAYER ON SAPPHIRE USING AN ARF EXCIMER LASER FOR SI EPITAXIAL-GROWTH [J].

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[8] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

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[10]

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