BEHAVIOR OF N-TYPE GE EXPOSED TO HIGHLY ENERGETIC RADIATION

被引：18

作者：

WIKNER, EG

机构：

来源：

PHYSICAL REVIEW | 1965年 / 138卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.138.A294

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A294 / &

共 15 条

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[7]

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[9]

SEITZ F, 1955, SOLID STATE PHYSICS, V1, P283

[10] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J].

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