共 22 条
[1]
DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY
[J].
PHYSICAL REVIEW B,
1989, 39 (03)
:1633-1647
[4]
THEORY OF SCANNING TUNNELING SPECTROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1988, 6 (02)
:319-322
[6]
EXPERIMENTAL AND THEORETICAL RESULTS OF RECTIFICATION MEASUREMENTS IN AN STM
[J].
JOURNAL DE PHYSIQUE,
1987, 48 (C-6)
:97-100
[9]
LAYER-BY-LAYER GROWTH OF METAL OVERLAYERS
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1988, 47 (04)
:393-398
[10]
TRANSITION FROM THE TUNNELING REGIME TO POINT CONTACT STUDIED USING SCANNING TUNNELING MICROSCOPY
[J].
PHYSICAL REVIEW B,
1987, 36 (02)
:1284-1287