DIFFUSIVITY OF AL IN TI AND THE EFFECT OF SI DOPING FOR VERY LARGE-SCALE INTEGRATED-CIRCUIT INTERCONNECT METALLIZATION

被引：11

作者：

NAHAR, RK

DEVASHRAYEE, NM

KHOKLE, WS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：880 / 883

页数：4

共 8 条

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