ATOMIC LAYER CONTROL OF THE GROWTH OF OXIDE SUPERCONDUCTORS USING LASER MOLECULAR-BEAM EPITAXY

被引:9
作者
TABATA, H
KAWAI, T
机构
[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567, Mihogaoka
关键词
D O I
10.1016/0040-6090(93)90169-P
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The control of atomic layers in high T(c) cuprate compounds has recently become possible using computer-controlled laser molecular beam epitaxy. Taking advantage of this method, a variety of high T(c) superconducting artificial lattices has been constructed by layer-by-layer growth with atomic layer and sub-unit-cell layer accuracy, and the basic structural factors of high T(c) cuprates have been controlled artificially. In Bi2Sr2Can-1CunO2n+4 artificial lattices, the number of CuO2 planes in the unit formula was changed from one to as much as eight. Furthermore, site-selective substitution has been carried out by inserting exotic ions into calcium or strontium sites. and the crystal structures and T(c) can be controlled artificially.
引用
收藏
页码:275 / 279
页数:5
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