A 16-MBIT DRAM WITH A RELAXED SENSE-AMPLIFIER-PITCH OPEN-BIT-LINE ARCHITECTURE

被引:14
作者
INOUE, M
YAMADA, T
KOTANI, H
YAMAUCHI, H
FUJIWARA, A
MATSUSHIMA, J
AKAMATSU, H
FUKUMOTO, M
KUBOTA, M
NAKAO, I
AOI, N
FUSE, G
OGAWA, S
ODANAKA, S
UENO, A
YAMAMOTO, H
机构
关键词
D O I
10.1109/4.5931
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1104 / 1112
页数:9
相关论文
共 18 条
[1]  
FUSE G, 1987, 19TH C SOL STAT DEV, P11
[2]  
HORIGUCHI F, 1987, DEC IEDM, P324
[3]  
INOUE M, 1988, FEB ISSCC, P246
[4]  
KAGA T, 1987, DEC IEDM, P332
[5]   A SUBSTRATE-PLATE TRENCH-CAPACITOR (SPT) MEMORY CELL FOR DYNAMIC RAMS [J].
LU, NCC ;
COTTRELL, PE ;
CRAIG, WJ ;
DASH, S ;
CRITCHLOW, DL ;
MOHLER, RL ;
MACHESNEY, BJ ;
NING, TH ;
NOBLE, WP ;
PARENT, RM ;
SCHEUERLEIN, RE ;
SPROGIS, EJ ;
TERMAN, LM .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) :627-634
[6]  
MANO T, 1987, FEB ISSCC, P22
[7]   A 4-MBIT DRAM WITH FOLDED-BIT-LINE ADAPTIVE SIDEWALL-ISOLATED CAPACITOR (FASIC) CELL [J].
MASHIKO, K ;
NAGATOMO, M ;
ARIMOTO, K ;
MATSUDA, Y ;
FURUTANI, K ;
MATSUKAWA, T ;
YAMADA, M ;
YOSHIHARA, T ;
NAKANO, T .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (05) :643-650
[8]  
NAKAJIMA S, 1984, DEC IEDM, P240
[9]  
NAKAMURA K, 1984, DEC IEDM, P236
[10]   A NEW HALF-MICROMETER P-CHANNEL MOSFET WITH EFFICIENT PUNCHTHROUGH STOPS [J].
ODANAKA, S ;
FUKUMOTO, M ;
FUSE, G ;
SASAGO, M ;
OHZONE, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :317-321