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MONOLITHIC GAAS/ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP

被引：3
作者：
NICHOLS, D
DUTTA, NK
BERGER, PR
SMITH, PR
SIVCO, D
CHO, AY
机构：
[1] AT&T Bell Laboratories, Murray Hill, New Jersey 07974
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 12期
关键词：
OPTOELECTRONICS; OPTICAL RECEIVERS; FIELD-EFFECT TRANSISTORS; EPITAXY AND EPITAXIAL GROWTH;
D O I：
10.1049/el:19930756
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic pin/MESFET photoreceiver in the GaAs/AlGaAs system was investigated. The structure used a single epitaxial growth step in which the pin photodiode was grown on top of the MESFET. The photoreceivers exhibited flat-band gains as high as 17 dB and bandwidths as high as 2.0 GHz.
引用
收藏
页码：1133 / 1134
页数：2
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