共 22 条
- [2] Abbati I., 1980, Journal of the Physical Society of Japan, V49, P1071
- [3] EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 636 - 640
- [4] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
- [5] ELECTRON-MICROSCOPE STUDIES OF THE STRUCTURE AND PROPAGATION OF THE PD2SI-(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (01): : 107 - 125
- [6] PHOTOIONIZATION FROM OUTER ATOMIC SUBSHELLS - MODEL STUDY [J]. PHYSICAL REVIEW, 1962, 128 (02): : 681 - &
- [8] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 916 - 919
- [10] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839