CW LASER CRYSTALLIZATION OF AMORPHOUS-SILICON - THERMAL OR ATHERMAL PROCESS

被引：14

作者：

IVANDA, M ^{[1
]}

FURIC, K ^{[1
]}

GAMULIN, O ^{[1
]}

PERSIN, M ^{[1
]}

GRACIN, D ^{[1
]}

机构：

[1] UNIV ZAGREB, SCH MED,DEPT PHYS & BIOPHYS, YU-41000 Zagreb, Croatia, YUGOSLAVIA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 08期

关键词：

D O I：

10.1063/1.349052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon films have been deposited by dc magnetron sputtering on different substrates with different thicknesses and hydrogen concentration. The microscopic area of amorphous layers was crystallized by the focused beam of a cw laser. The laser threshold power for transition from the amorphous to crystalline state is dependent on the radius of the laser beam, film thickness, material of the substrate, and hydrogen concentration. These experimental results show that cw laser crystallization of amorphous silicon is a thermally induced process.

引用

页码：4637 / 4639

页数：3

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