ATOMIC-LEVEL INTERFACE STRUCTURE OF INP/INPAS/INP MEASURED BY X-RAY CRYSTAL TRUNCATION ROD SCATTERING

We conducted an X-ray crystal truncation rod (CTR) scattering measurement for samples of InP/InPAs/InP structure prepared by organometallic vapor phase epitaxy (OMVPE). The samples were 1 ML grown InAs capped by InP and InP exposed to AsH3 for 8 s. We were able to investigate the distributions of As atoms in the layer of each sample with atomic scale resolution. It was shown that in the sample intended to be 1 ML InAs, As atoms of only 0.355 ML InAs were contained, and in the sample exposed to AsH3 for 8 s, As atoms of as much as As 0.72 ML InAs were contained. The results of the X-ray CTR measurement agreed well with the result of the X-ray fluorescence yield measurement and the designed structures.