COMMENT ON SELECTION-RULE EFFECTS IN ELECTRON-ENERGY-LOSS SPECTROSCOPY OF GE AND GAAS SURFACES

被引：9

作者：

FREEOUF, JL ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.36.1095

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1095 / 1098

页数：4

共 12 条

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[5] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

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[9] ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES [J].

LUDEKE, R ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1974, 33 (11) :653-656

[10] SELECTION-RULE EFFECTS IN ELECTRON-LOSS SPECTROSCOPY OF GE AND GAAS SURFACES [J].

LUDEKE, R ;

KOMA, A .

PHYSICAL REVIEW LETTERS, 1975, 34 (13) :817-821

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