CRYSTAL-GROWTH OF SIC BY STEP-CONTROLLED EPITAXY

Vapor phase epitaxial (VPE) growth of SiC on 6H-SiC substrates has been carried out at 1500°C. On well-oriented (0001)Si faces twin crystalline 3C-SiC was grown, whereas on off-oriented (0001)Si faces, single crystalline 6H-SiC was grown with a very smooth surface. This temperature is 300°C lower than that previously reported for 6H-SiC VPE growth. By the introduction of off-orientation, the density of surface steps is controlled. As a result, the growth on off-oriented substrates proceeds according to different mechanisms from that on well-oriented substrates. Surface morphology of grown layers on off-oriented substrates, however, varied with the off-direction. Grown layers are characterized by observation of etch-pits and photoluminescence (PL) measurements. The growth mechanism on (0001)Si faces of 6H-SiC is discussed on the basis of these experimental results. © 1990.