AU-GE BASED OHMIC CONTACTS ON GAAS

被引：7

作者：

PROCOP, M

SANDOW, B

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 02期

关键词：

D O I：

10.1002/pssa.2210950271

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K211 / K215

页数：5

共 16 条

[1] FORMATION, MICROSTRUCTURE AND RESISTANCES OF AU-GE/N-GAAS, AU-GE/N-INP, AU-ZN/P-INP AND AU-BE/P-INP CONTACTS [J].

AUVRAY, P ;

GUIVARCH, A ;

LHARIDON, H ;

MERCIER, JP ;

HENOC, P .

THIN SOLID FILMS, 1985, 127 (1-2) :39-68

[2] OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

THIN SOLID FILMS, 1983, 104 (3-4) :391-397

[3] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J].

CHRISTOU, A .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :141-&

[4] GOLD ON GAAS - ITS CRYSTALLOGRAPHIC ORIENTATION AND CONTROL ON THE ORIENTATION OF THE AU-GA REACTION-PRODUCT [J].

CHUNG, DDL ;

BEAM, E .

THIN SOLID FILMS, 1985, 128 (3-4) :299-319

[5] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS [J].

HENRY, HG ;

DAWSON, DE ;

LEMNIOS, ZJ ;

KIM, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1100-1103

[6] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J].

ILIADIS, A ;

SINGER, KE .

SOLID-STATE ELECTRONICS, 1983, 26 (01) :7-&

[7] METALLURGICAL BEHAVIOR OF NI/AU-GE OHMIC CONTACTS TO GAAS [J].

ILIADIS, A ;

SINGER, KE .

SOLID STATE COMMUNICATIONS, 1984, 49 (01) :99-101

[8] AUGER STUDIES ON RAPID GRAIN-BOUNDARY DIFFUSION OF GE THROUGH AU [J].

INGREY, S ;

MACLAURIN, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :358-361

[9]

KIM T, 1984, MATERIALS RES SOC S, V25, P69

[10] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].

KUAN, TS ;

BATSON, PE ;

JACKSON, TN ;

RUPPRECHT, H ;

WILKIE, EL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957

← 1 2 →