PHOTOREFLECTANCE STUDY OF THE SURFACE FERMI LEVEL AT (001) N-TYPE AND P-TYPE GAAS-SURFACES

被引：109

作者：

YIN, X ^{[1
]}

CHEN, HM ^{[1
]}

POLLAK, FH ^{[1
]}

CHAN, Y ^{[1
]}

MONTANO, PA ^{[1
]}

KIRCHNER, PD ^{[1
]}

PETTIT, GD ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.578125

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report a photoreflectance study of Fermi level pinning (V(F)) on (001) n- and p-type GaAs with large, uniform electric fields. Surface photovoltage (V(s)) effects were evaluated as a function of temperature (77 K < T < 450 K), pump beam wavelength (63 3 and 407 nm) and W-metal coverage (in situ). The dependence of the measured barrier height, V(b) (= V(F) - V(s)), on T can be explained by a modification of the theory of M. Hecht [Phys. Rev. B 41, 7918 (1990)] yielding values of V(F) = 0.77 +/- 0.02 V and V(F) = 0.75 +/- 0.02 V for n- and p-type GaAs, respectively, at 300 K. In addition, by introducing the ratio (r) of the area of the surface states to the illuminated area into the theory of Hecht we have been able to estimate the density of surface states on the GaAs surface. The effect of metal coverage is to increase r and reduce the influence of V(s).

引用

页码：131 / 136

页数：6

共 38 条

[11]

ENDERLEIN R, COMMUNICATION

[12] RAMAN-SCATTERING MEASUREMENTS OF DECREASED BARRIER HEIGHTS IN GAAS FOLLOWING SURFACE CHEMICAL PASSIVATION [J].

FARROW, LA ;

SANDROFF, CJ ;

TAMARGO, MC .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1931-1933

[13]

Glosser R., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V794, P88, DOI 10.1117/12.940897

[14] PHOTOVOLTAIC EFFECTS IN PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION [J].

HECHT, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :1018-1024

[15] ROLE OF PHOTOCURRENT IN LOW-TEMPERATURE PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION [J].

HECHT, MH .

PHYSICAL REVIEW B, 1990, 41 (11) :7918-7921

[16] VOLTAGE-CONTROLLED PHOTOETCHING OF GAAS [J].

HOFFMANN, HJ ;

WOODALL, JM ;

CHAPPELL, TI .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :564-566

[17] SEMICONDUCTOR INTERFACE STUDIES USING CORE AND VALENCE LEVEL PHOTOEMISSION [J].

HORN, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (04) :289-304

[18]

Hovel H., 1975, SEMICONDUCT SEMIMET, V11, P59

[19] DETERMINATION OF BAND BENDING AT THE SI(113) SURFACE FROM PHOTOVOLTAGE-INDUCED CORE-LEVEL SHIFTS [J].

JACOBI, K ;

MYLER, U ;

ALTHAINZ, P .

PHYSICAL REVIEW B, 1990, 41 (15) :10721-10726

[20]

KANATA T, 1990, P SOC PHOTO-OPT INS, V1286, P56, DOI 10.1117/12.20837

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