MEASUREMENT OF COMPOSITIONAL INHOMOGENEITY OF LIQUID-PHASE EPITAXIAL INGAPAS

被引:11
作者
BRUNEMEIER, PE [1 ]
ROTH, TJ [1 ]
HOLONYAK, N [1 ]
STILLMAN, GE [1 ]
机构
[1] UNIV ILLINOIS,HORT RES LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.94342
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:373 / 375
页数:3
相关论文
共 14 条
[1]   OBSERVATION OF STEPWISE VARIATIONS OF THE LATTICE-PARAMETER ON GAXIN1-XASYP1-Y LAYERS GROWN BY LIQUID-PHASE EPITAXY ON (100) INP [J].
BURGEAT, J ;
QUILLEC, M ;
PRIMOT, J ;
LEROUX, G ;
LAUNOIS, H .
APPLIED PHYSICS LETTERS, 1981, 38 (07) :542-544
[2]   DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J].
ESTOP, E ;
IZRAEL, A ;
SAUVAGE, M .
ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1) :627-&
[3]   LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].
FENG, M ;
COOK, LW ;
TASHIMA, MM ;
STILLMAN, GE .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :241-280
[4]  
HOFSTRA J, 1978, J CRYST GROWTH, V44, P513
[5]   CONTINUOUS ROOM-TEMPERATURE PHOTOPUMPED LASER OPERATION OF VISIBLE-SPECTRUM LPE IN1-XGAXP1-ZASZ (LAMBDA APPROXIMATELY 6700 A) [J].
KIRCHOEFER, SW ;
REZEK, EA ;
VOJAK, BA ;
HOLONYAK, N ;
FINN, D ;
KEUNE, DL ;
ROSSI, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :161-166
[6]   DEPENDENCE OF ROCKING CURVE FOR THIN IN1-XGAXAS1-YPY LAYER ON THICKNESS IN A SYMMETRIC BRAGG CASE [J].
KOMIYA, S ;
NAKAJIMA, K ;
UMEBU, I ;
AKITA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (09) :1313-1314
[7]  
NAKAJIMA K, 1981, J APPL PHYS, V52, P4574
[8]   INXGA1-XASYP1-Y ALLOY STABILIZATION BY THE INP SUBSTRATE INSIDE AN UNSTABLE REGION IN LIQUID-PHASE EPITAXY [J].
QUILLEC, M ;
DAGUET, C ;
BENCHIMOL, JL ;
LAUNOIS, H .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :325-326
[9]  
REYNOLDS CL, 1982, J CRYST GROWTH, V59, P525, DOI 10.1016/0022-0248(82)90373-6
[10]   THIN-LAYER LIQUID-PHASE EPITAXY OF INGAPAS HETEROSTRUCTURES IN SHORT INTERVALS ()100MS) - NON-DIFFUSION-LIMITED CRYSTAL-GROWTH [J].
REZEK, EA ;
VOJAK, BA ;
CHIN, R ;
HOLONYAK, N .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :255-285