HYDROGEN DIFFUSION IN A-SI-H STIMULATED BY INTENSE ILLUMINATION

被引：9

作者：

GREIM, O ^{[1
]}

WEBER, J ^{[1
]}

BAER, Y ^{[1
]}

KROLL, U ^{[1
]}

机构：

[1] UNIV NEUCHATEL,INST MICROTECHNOL,CH-2000 NEUCHATEL,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.10644

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) films have been thermally annealed at temperatures in the range 220-270 degrees C for 24-48 h either under intense visible light illumination (4-16 W/cm(2)) or in the dark. After each annealing, the hydrogen-concentration profile was measured with Rutherford-backscattering-spectrometry and elastic-recoil-detection-analysis ion-beam analysis methods. A model is proposed which shows that, in good agreement with our results, the hydrogen-diffusion constant D-H is proportional to the power of illumination and also proportional to the loosely bonded hydrogen concentration. Other consequences of the model are discussed.

引用

页码：10644 / 10648

页数：5

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