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EXPERIMENTAL AND COMPUTED 4 SCATTERING AND 4 NOISE PARAMETERS OF GAAS FETS UP TO 4 GHZ
被引:1
作者
:
ANASTASSIOU, A
论文数:
0
引用数:
0
h-index:
0
机构:
ETH ZURICH, DEPT ADV ELECT ENGN, ZURICH, SWITZERLAND
ETH ZURICH, DEPT ADV ELECT ENGN, ZURICH, SWITZERLAND
ANASTASSIOU, A
[
1
]
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
机构:
ETH ZURICH, DEPT ADV ELECT ENGN, ZURICH, SWITZERLAND
ETH ZURICH, DEPT ADV ELECT ENGN, ZURICH, SWITZERLAND
STRUTT, MJO
[
1
]
机构
:
[1]
ETH ZURICH, DEPT ADV ELECT ENGN, ZURICH, SWITZERLAND
来源
:
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
|
1974年
/ MT22卷
/ 02期
关键词
:
D O I
:
10.1109/TMTT.1974.1128187
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:138 / 140
页数:3
相关论文
共 16 条
[1]
EXPERIMENTAL GAIN AND NOISE PARAMETERS OF MICROWAVE GAAS FETS IN L AND S BANDS
[J].
ANASTASSIOU, A
论文数:
0
引用数:
0
h-index:
0
机构:
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
ANASTASSIOU, A
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
机构:
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
STRUTT, MJO
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1973,
MT21
(06)
:419
-422
[2]
NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES
[J].
BAECHTOLD, W
论文数:
0
引用数:
0
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BAECHTOLD, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(02)
:97
-+
[3]
NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS
[J].
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
BAECHTOLD, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
:674
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[4]
ENGELI ME, 1970, 22 FID RECH PUBL
[5]
LATTICE INTERACTION NOISE OF HOT CARRIERS IN SINGLE INJECTION SOLID-STATE DIODES
[J].
GISOLF, A
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0
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FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
GISOLF, A
;
ZIJLSTRA, RJ
论文数:
0
引用数:
0
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0
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FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
ZIJLSTRA, RJ
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SOLID-STATE ELECTRONICS,
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(05)
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[6]
COMPUTER-AIDED DETERMINATION OF SMALL-SIGNAL EQUIVALENT NETWORK OF A BIPOLAR MICROWAVE TRANSISTOR
[J].
HARTMANN, K
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0
引用数:
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HARTMANN, K
;
STRUTT, MJO
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0
引用数:
0
h-index:
0
STRUTT, MJO
;
KOTYCZKA, W
论文数:
0
引用数:
0
h-index:
0
KOTYCZKA, W
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1972,
MT20
(02)
:120
-&
[7]
EQUIVALENT NETWORKS FOR 3 DIFFERENT MICROWAVE BIPOLAR TRANSISTOR PACKAGES IN 2-10 GHZ RANGE
[J].
HARTMANN, K
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HARTMANN, K
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STRUTT, MJO
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0
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STRUTT, MJO
.
ELECTRONICS LETTERS,
1971,
7
(18)
:510
-&
[8]
CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
[J].
HOWER, PL
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0
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机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
HOWER, PL
;
BECHTEL, NG
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0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
BECHTEL, NG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
:213
-220
[9]
HIGH-FREQUENCY FET NOISE PARAMETERS AND APPROXIMATION OF OPTIMUM SOURCE ADMITTANCE
[J].
LEUPP, A
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Advanced Electrical Engineering, Swiss Federal Institute of Technology, Zürich
LEUPP, A
;
STRUTT, MJO
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0
引用数:
0
h-index:
0
机构:
Department of Advanced Electrical Engineering, Swiss Federal Institute of Technology, Zürich
STRUTT, MJO
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(05)
:428
-&
[10]
NOISE BEHAVIOUR OF MOSFET AT VHF AND UHF
[J].
LEUPP, A
论文数:
0
引用数:
0
h-index:
0
LEUPP, A
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
STRUTT, MJO
.
ELECTRONICS LETTERS,
1968,
4
(15)
:313
-&
←
1
2
→
共 16 条
[1]
EXPERIMENTAL GAIN AND NOISE PARAMETERS OF MICROWAVE GAAS FETS IN L AND S BANDS
[J].
ANASTASSIOU, A
论文数:
0
引用数:
0
h-index:
0
机构:
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
ANASTASSIOU, A
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
机构:
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
SWISS FED INST TECHNOL, DEPT ADV ELECT ENGN, ZURICH 8006, SWITZERLAND
STRUTT, MJO
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1973,
MT21
(06)
:419
-422
[2]
NOISE BEHAVIOR OF SCHOTTKY BARRIER GATE FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES
[J].
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
BAECHTOLD, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(02)
:97
-+
[3]
NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS
[J].
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
BAECHTOLD, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
:674
-+
[4]
ENGELI ME, 1970, 22 FID RECH PUBL
[5]
LATTICE INTERACTION NOISE OF HOT CARRIERS IN SINGLE INJECTION SOLID-STATE DIODES
[J].
GISOLF, A
论文数:
0
引用数:
0
h-index:
0
机构:
FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
GISOLF, A
;
ZIJLSTRA, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
FYS LAB RIJKS UNIV,UTRECHT,NETHERLANDS
ZIJLSTRA, RJ
.
SOLID-STATE ELECTRONICS,
1973,
16
(05)
:571
-580
[6]
COMPUTER-AIDED DETERMINATION OF SMALL-SIGNAL EQUIVALENT NETWORK OF A BIPOLAR MICROWAVE TRANSISTOR
[J].
HARTMANN, K
论文数:
0
引用数:
0
h-index:
0
HARTMANN, K
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
STRUTT, MJO
;
KOTYCZKA, W
论文数:
0
引用数:
0
h-index:
0
KOTYCZKA, W
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1972,
MT20
(02)
:120
-&
[7]
EQUIVALENT NETWORKS FOR 3 DIFFERENT MICROWAVE BIPOLAR TRANSISTOR PACKAGES IN 2-10 GHZ RANGE
[J].
HARTMANN, K
论文数:
0
引用数:
0
h-index:
0
HARTMANN, K
;
KOTYCZKA, W
论文数:
0
引用数:
0
h-index:
0
KOTYCZKA, W
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
STRUTT, MJO
.
ELECTRONICS LETTERS,
1971,
7
(18)
:510
-&
[8]
CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
[J].
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
HOWER, PL
;
BECHTEL, NG
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
BECHTEL, NG
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
:213
-220
[9]
HIGH-FREQUENCY FET NOISE PARAMETERS AND APPROXIMATION OF OPTIMUM SOURCE ADMITTANCE
[J].
LEUPP, A
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Advanced Electrical Engineering, Swiss Federal Institute of Technology, Zürich
LEUPP, A
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Advanced Electrical Engineering, Swiss Federal Institute of Technology, Zürich
STRUTT, MJO
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(05)
:428
-&
[10]
NOISE BEHAVIOUR OF MOSFET AT VHF AND UHF
[J].
LEUPP, A
论文数:
0
引用数:
0
h-index:
0
LEUPP, A
;
STRUTT, MJO
论文数:
0
引用数:
0
h-index:
0
STRUTT, MJO
.
ELECTRONICS LETTERS,
1968,
4
(15)
:313
-&
←
1
2
→