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METAL-TO-METAL ANTIFUSES WITH VERY THIN SILICON DIOXIDE FILMS

被引：16
作者：
ZHANG, G
HU, C
YU, P
CHIANG, S
HAMDY, E
机构：
[1] ACTEL CORP,SUNNYVALE,CA 94086
[2] PROLIMX CORP,SAN JOSE,CA 95119
[3] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期
关键词：
Electric fuses;
D O I：
10.1109/55.296226
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current.
引用
收藏
页码：310 / 312
页数：3
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