LIQUID-PHASE EPITAXY OF SI-DOPED GAAS FOR EFFICIENT LIGHT EMITTING DIODES

被引：8

作者：

MARUYAMA, S ^{[1
]}

AMANO, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TELE PUBL CORP,ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 04期

关键词：

D O I：

10.1143/JJAP.14.445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：445 / 452

页数：8

共 11 条

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J].

AHN, BH ;

SHURTZ, RR ;

TRUSSELL, CW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4512-&

[2] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) :157-&

[3]

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[4] ANNEALING EFFECT ON GAAS SUBSTRATE CRYSTALS [J].

MARUYAMA, S ;

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) :129-+

[5] LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE [J].

MARUYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (03) :424-&

[6] HIGH PURITY GAAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY [J].

MIKI, H ;

OTSUBO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) :509-&

[7] INJECTION LASER [J].

PILKUHN, MH .

PHYSICA STATUS SOLIDI, 1968, 25 (01) :9-+

[8] NEW ROTATING-BOAT TECHNIQUE FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE [J].

RAVI, HN ;

GUHA, S ;

SARPANGA.S .

JOURNAL OF CRYSTAL GROWTH, 1973, 18 (03) :212-216

[9]

SOLOMON R, 1969, 2ND P INT S GALL ARS, P11

[10]

VERMA AR, 1953, CRYSTAL GROWTH DISLO, pCH3

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