INVERSE-PHOTOEMISSION STUDY OF UNOCCUPIED ELECTRONIC STATES IN GE AND SI - BULK ENERGY-BANDS

被引：49

作者：

STRAUB, D

LEY, L

HIMPSEL, FJ

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2607

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2607 / 2614

页数：8

共 62 条

[1] SOFT-X-RAY ELECTROREFLECTANCE - FINAL-STATE EFFECTS ON SI(2P) OPTICAL-TRANSITIONS [J].

BAUER, RS ;

BACHRACH, RZ ;

MCMENAMIN, JC ;

ASPNES, DE .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02) :409-416

[2] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS [J].

BRINGANS, RD ;

HOCHST, H .

PHYSICAL REVIEW B, 1982, 25 (02) :1081-1089

[3]

CARDONA M, 1978, TOPICS APPLIED PHYSI, V26, P86

[4] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[5]

CHELICOWSKY JR, 1976, PHYS REV B, V14, P55

[6]

DELCASTILLO M, 1985, 17TH P INT C PHYS SE, P1125

[7] ULTRAVIOLET BREMSSTRAHLUNG SPECTROSCOPY [J].

DOSE, V .

PROGRESS IN SURFACE SCIENCE, 1983, 13 (03) :225-284

[8] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605

[9] NORMAL-INCIDENCE GRATING SPECTROGRAPH WITH LARGE ACCEPTANCE FOR INVERSE PHOTOEMISSION [J].

FAUSTER, T ;

STRAUB, D ;

DONELON, JJ ;

GRIMM, D ;

MARX, A ;

HIMPSEL, FJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1985, 56 (06) :1212-1214

[10] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

GOBELI, GW ;

ALLEN, FG .

PHYSICAL REVIEW, 1965, 137 (1A) :A245-&

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