AN APPARATUS FOR ION-BEAM SPUTTERING AND ITS APPLICATION TO HIGH-RESOLUTION RADIOTRACER DEPTH PROFILING OF DIFFUSION SAMPLES

被引：37

作者：

FAUPEL, F

HUPPE, PW

RATZKE, K

WILLECKE, R

HEHENKAMP, T

机构：

[1] Institut für Metallphysik der Universitat Gottingen Abteilung Metallkunde, 3400 Gottingen

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.578072

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An apparatus for direct current ion beam sputtering is described which incorporates some new features, specifically with respect to target and plasma current control. In conjunction with a radiotracer technique it is demonstrated how resolution and sensitivity of depth profiling can be substantially enhanced by reduction of the ion energy and correction for after effects in sputtering. Investigations of metal diffusion in polymers and isotope effect measurements in metallic glasses are presented as examples.

引用

页码：92 / 97

页数：6

共 13 条

[1] EVALUATION OF RADIO-FREQUENCY SPUTTERING AS A MICRO-SECTIONING TECHNIQUE FOR TRACER DIFFUSION STUDIES IN OXIDES [J].