CHARACTERIZATION OF SILICON DURING THE FABRICATION OF NUCLEAR-DETECTORS BY THE PLANAR PROCESS

被引：1

作者：

FONTAINE, JC

BARTHE, S

PONPON, JP

SCHUNCK, JP

SIFFERT, P

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no. 292), F-67037 Strasbourg cedex 2

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(93)90326-D

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A characterization procedure based on the photoconductive decay method has been developed to determine the recombination lifetime and the surface recombination velocity during silicon detectors manufacturing by the planar process. Special attention has been given towards the evolution of these parameters with regards to thermal oxidation, ion implantation and annealing, in order to improve and control the fabrication steps.

引用

页码：10 / 15

页数：6

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