LOW-ENERGY ION-BEAMS, MOLECULAR-BEAM EPITAXY, AND SURFACE-MORPHOLOGY

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SI AND GE AND FABRICATION OF ISOTOPIC HETEROSTRUCTURES BY DIRECT ION-BEAM DEPOSITION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 975 - 982

[3] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[4] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4255 - 4268

[5] ORIENTATION AND TEMPERATURE DEPENDENCE OF ELECTRON DAMAGE IN N-TYPE GERMANIUN [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (158): : 357 - &

[6] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &

[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1251 - 1258

[8] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[9] GATES SM, UNPUB SURF SCI

[10] ADSORPTION ON SI(111) DURING CVD OF SILICON FROM SILANE - THE EFFECT OF TEMPERATURE, BOND STRENGTH, SUPERSATURATION AND PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (02) : 303 - 321

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SI AND GE AND FABRICATION OF ISOTOPIC HETEROSTRUCTURES BY DIRECT ION-BEAM DEPOSITION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 975 - 982

[3] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[4] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4255 - 4268

[5] ORIENTATION AND TEMPERATURE DEPENDENCE OF ELECTRON DAMAGE IN N-TYPE GERMANIUN [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (158): : 357 - &

[6] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &

[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1251 - 1258

[8] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[9] GATES SM, UNPUB SURF SCI

[10] ADSORPTION ON SI(111) DURING CVD OF SILICON FROM SILANE - THE EFFECT OF TEMPERATURE, BOND STRENGTH, SUPERSATURATION AND PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (02) : 303 - 321