SIO2 PREPARED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING SICL4 AND O-2 AT SUBSTRATE TEMPERATURES OF LESS THAN 200-DEGREES-C

Silicon dioxide films have been prepared by the remote plasma-enhanced chemical vapor deposition technique using SiCl4 and O2 as source materials. The structural quality of the films was analyzed by infrared transmittance, ellipsometry, Auger electron spectroscopy and chemical etch rate measurements. The electrical integrity was analyzed by I-V and C-V measurements performed in metal-oxide-semiconductor structures prepared using the deposited oxides. Good-quality oxides have been obtained at substrate temperatures in the range of 100 to 150-degrees-C. At lower temperatures (25 and 50-degrees-C) oxide films with good insulating qualities are obtained but the level of interface states is large. The deposition rate is only slightly dependent on the substrate temperature. The chemical etch rate is similar to that obtained for oxides prepared at higher temperatures. Destructive breakdown is in the range from 6.7 to 8.9 MV cm-1. Fixed charge densities are in the range from 5 x 10(10) to 5.2 x 10(11) charges cm-2.