PRESSURE-DEPENDENCE OF POSITRON-ANNIHILATION IN GERMANIUM

被引：8

作者：

BOUARISSA, N

KOBAYASI, T

NARA, H

AOURAG, H

机构：

[1] TOHOKU UNIV,COLL MED SCI,SENDAI,MIYAGI 980,JAPAN

[2] UNIV SIDI BEL ABBES,COMPUTAT MAT SCI LAB,SIDI BEL ABBES,ALGERIA

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 96卷 / 09期

关键词：

SEMICONDUCTORS; HIGH PRESSURE; ELECTRONIC STATES;

D O I：

10.1016/0038-1098(95)00398-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron-positron momentum densities are calculated for the (001-110) plane in Ge at normal and increased pressure. The calculations are based on the independent particule approximation coupled with the pseudopotential method. The shapes of the profiles indicate that the angular correlation of positron annihilation radiation (ACPAR) along different crystallographic directions in Ge are highly sensitive to pressure.

引用

页码：689 / 695

页数：7

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