A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS/INAIAS HEMT TECHNOLOGY

被引：20

作者：

GEORGAKILAS, A

HALKIAS, G

CHRISTOU, A

KORNILIOS, N

PAPAVASSILIOU, C

ZEKENTES, K

KONSTANTINIDIS, G

PEIRO, F

CORNET, A

ABABOU, S

TABATA, A

GUILLOT, G

机构：

[1] UNIV MARYLAND,CALCE ELECTR PACKAGING RES CTR,MICROELECTRON DEV LAB,COLL PK,MD 20742

[2] UNIV BARCELONA,DEPT FIS APLICADA & ELECTRON,CARACTERITACIO MAT MICROELECTRON LAB,E-08028 BARCELONA,SPAIN

[3] INST NATL SCI APPL,PHYS MAT LAB,CNRS,URA 358,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 05期

关键词：

D O I：

10.1149/1.2221587

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of the substrate temperature in the molecular beam epitaxy growth of In0.52Al0.48As on (001)InP have been investigated. A strong dependence of the structural, electrical, and optical properties of InAlAs films on the growth temperature has been found and optimized material can be grown at 530-degrees-C. The low substrate temperatures deteriorate the material quality due to insufficient growth kinetics, while the higher temperatures allow the formation of composition inhomogeneities which also deteriorate the structural, optical, and electrical characteristics of In0.52Al0.48As. Using In0.52Al0.48As buffers grown at 530-degrees-C, state-of-the-art InxGa1-xAs/In0.52Al0.48As high electron mobility transistors were fabricated and showed reduced output conductance and no kink eff ect in the I(V) characteristics.

引用

页码：1503 / 1509

页数：7

共 19 条

[1] A1INAS-GAINAS HEMTS UTILIZING LOW-TEMPERATURE A1INAS BUFFERS GROWN BY MBE [J].