PERSISTENT CHANNEL DEPLETION CAUSED BY HOT-ELECTRON TRAPPING EFFECT IN SELECTIVELY DOPED N-ALGAAS/GAAS STRUCTURES

被引：9

作者：

KINOSHITA, H

NISHI, S

AKIYAMA, M

ISHIDA, T

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 03期

关键词：

D O I：

10.1143/JJAP.24.377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：377 / 378

页数：2

共 7 条

[1]

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[3] INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K [J].

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[4] ELECTRON-TRANSPORT IN HETEROJUNCTIONS AND SUPER-LATTICES [J].

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[5]

Kinoshita H., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1629

[6]

LANG DV, PHYS REV B, V19, P115

[7] TEMPERATURE-DEPENDENCE OF THE IV CHARACTERISTICS OF MODULATION-DOPED FETS [J].

VALOIS, AJ ;

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SHUR, MS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :190-195

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