MICROWAVE PLASMA-ETCHING OF SI WITH CF4 AND SF6 GAS

被引：31

作者：

SUZUKI, K

OKUDAIRA, S

NISHIMATSU, S

USAMI, K

KANOMATA, I

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123675

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2764 / 2769

页数：6

共 10 条

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[5]

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[7] ROLES OF IONS AND NEUTRAL ACTIVE SPECIES IN MICROWAVE PLASMA-ETCHING [J].

SUZUKI, K ;

OKUDAIRA, S ;

KANOMATA, I .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1024-1028

[8] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J].

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WINTERS, HF .

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[9]

VANDEVEN EPG, 1980, ELECTROCHEM SOC, V80, P253

[10] PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH [J].

WINTERS, HF ;

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