INTERACTION OF DIFFUSION AND STACKING FAULTS IN SI EPITAXIAL MATERIAL

被引：7

作者：

JACCODIN.RJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 09期

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D O I：

10.1063/1.1714586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2811 / &

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[1] Bardeen J, 1952, IMPERFECTIONS NEARLY
[2] INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS
BOOKER, GR
HOWIE, A
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 156 - 157
[3] ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON
BOOKER, GR
STICKLER, R
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 158 - 160
[4] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON
BOOKER, GR
STICKLER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &
[5] COTTRELL AH, 1958, VACANCIES OTHER POIN
[6] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2275 - 2283
[7] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON
FINCH, RH
QUEISSER, HJ
WASHBURN, J
THOMAS, G
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &
[8] DIFFUSION-INDUCED DISLOCATION NETWORKS IN SI ( P + B DIFFUSION E/T )
JACCODINE, RJ
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (06) : 114 - &
[9] KELLY A, 1963, PROGR MAT SCI, V10, P241
[10] ON THE ORIGIN OF DISLOCATIONS
KUHLMANNWILSDORF, D
[J]. PHILOSOPHICAL MAGAZINE, 1958, 3 (26): : 125 - 139