EPITAXIAL-GROWTH OF AN AL/CAF2/AL/SI(111) STRUCTURE

Despite their large lattice mismatch (approximately 25%), epitaxial CaF2 films have been grown on single crystal Al (111) on Si (111) by low temperature molecular beam epitaxy. X-ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180-degrees or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si (111) structure suggests that Al can be a useful conductor material in three-dimensional device integration.