GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTAL INSULATORS ON SILICON

被引：106

作者：

SCHOWALTER, LJ

FATHAUER, RW

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

[2] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1989年 / 15卷 / 04期

关键词：

D O I：

10.1080/10408438908243740

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：367 / 421

页数：55

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