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GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTAL INSULATORS ON SILICON

被引：106
作者：
SCHOWALTER, LJ
FATHAUER, RW
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
[2] CALTECH,JET PROP LAB,PASADENA,CA 91109
来源：
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1989年 / 15卷 / 04期
关键词：
D O I：
10.1080/10408438908243740
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：367 / 421
页数：55
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