INFLUENCE OF GROWTH TEMPERATURE ON THE PHYSICAL-PROPERTIES OF SI FILMS ON YTTRIA-STABILIZED, CUBIC ZIRCONIA SUBSTRATES

被引：3

作者：

LIN, AL

GOLECKI, I

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 01期

关键词：

D O I：

10.1149/1.2113771

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：239 / 244

页数：6

共 23 条

[1]

Aleksandrov V. I., 1978, Current topics in materials science, vol.1, P421

[2]

BLOEM J, 1978, ACTA ELECTRON, V21, P3

[3]

Cullity B. D, 1956, ELEMENTS XRAY DIFFRA

[4] MEASUREMENT OF THE NEAR-SURFACE CRYSTALLINITY OF SILICON ON SAPPHIRE BY UV REFLECTANCE [J].

DUFFY, MT ;

CORBOY, JF ;

CULLEN, GW ;

SMITH, RT ;

SOLTIS, RA ;

HARBEKE, G ;

SANDERCOCK, JR ;

BLUMENFELD, M .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :10-18

[5] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

DUMIN, DJ ;

ROBINSON, PH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) :469-+

[6] RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF EPITAXIAL, LOW-MASS FILMS ON HIGH-MASS SUBSTRATES [J].

GOLECKI, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :63-66

[7] HETEROEPITAXIAL SI FILMS ON YTTRIA-STABILIZED, CUBIC ZIRCONIA SUBSTRATES [J].

GOLECKI, I ;

MANASEVIT, HM ;

MOUDY, LA ;

YANG, JJ ;

MEE, JE .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :501-503

[8]

GOLECKI I, 1984, AFWALTR834137 FIN TE

[9]

GOLECKI I, 1983, MATERIALS RES SOC S, V14, P541

[10] SURFACE CHARGE EFFECTS ON RESISTIVITY AND HALL-COEFFICIENT OF THIN SILICON-ON-SAPPHIRE FILMS [J].

HAM, WE .

APPLIED PHYSICS LETTERS, 1972, 21 (09) :440-+

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