A GAAS 8X8-BIT MULTIPLIER ACCUMULATOR USING JFET DCFL

被引：7

作者：

GONOI, K

HONBORI, I

WADA, M

TOGASHI, K

KATO, Y

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1986年 / 21卷 / 04期

关键词：

D O I：

10.1109/JSSC.1986.1052566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：523 / 529

页数：7

共 12 条

[1]

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[2]

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[3]

ISHII Y, 1984, OCT IEEE GAAS IC S, P121

[4]

KATO Y, 1983, 15TH P C SOL STAT DE, P65

[5]

KATO Y, 1982, NOV GAAS IC S, P187

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :599-603

[9]

OHMORI M, 1985, I PHYS C SER, V74, P647

[10] COMPARISON OF THE ORIENTATION EFFECT OF SIO2-ENCAPSULATEED AND SI3N4-ENCAPSULATED GAAS-MESFETS [J].

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