COMPOSITION AND STRUCTURE OF ION-BOMBARDMENT-INDUCED GROWTH CONES ON INP

被引:23
作者
MALHERBE, JB
LAKNER, H
GRIES, WH
机构
[1] DEUTSCHE BUNDESPOST TELEKOM,RES INST,POB 100003,W-6100 DARMSTADT,GERMANY
[2] TECH UNIV BRAUNSCHWEIG,INST SEMICOND TECHNOL,W-3300 BRAUNSCHWEIG,GERMANY
[3] UNIV DUISBURG,MAT ELECT ENGN SONDERFORSCHUNGSBEREICH 254,W-4100 DUISBURG,GERMANY
[4] UNIV PRETORIA,DEPT PHYS,PRETORIA 0002,SOUTH AFRICA
关键词
D O I
10.1002/sia.740171006
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The previously reported1,2 effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10(15) to 2 x 10(17) cm-2.
引用
收藏
页码:719 / 725
页数:7
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