AUTODOPING PHENOMENA IN EPITAXIAL SILICON

被引：9

作者：

ACKERMANN, GK ^{[1
]}

EBERT, E ^{[1
]}

机构：

[1] IBM,RES & DEV LAB,BOBLINGEN,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 09期

关键词：

D O I：

10.1149/1.2120122

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1910 / 1915

页数：6

共 18 条

[1]

BIEDERMANN EE, COMMUNICATION

[2]

BRATTER RL, 1973, IBM TR221599

[3]

DAVANZO DC, 1978, J ELCHEM SO, V125, P1171

[4]

Grove A. S., 1967, PHYS TECHNOLOGY SEMI, P169

[5]

HAGMANN D, UNPUB

[6] BORON AUTODOPING DURING SILANE EPITAXY [J].

LANGER, PH ;

GOLDSTEIN, JI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :591-598

[7]

LEWE V, 1980, P ESSDERC H, V4, P182

[8] IMPURITY PROFILE MEASUREMENTS OF THIN EPITAXIAL SILICON WAFER BY MULTILAYER SPREADING RESISTANCE ANALYSIS [J].

LIDA, Y ;

ABE, H ;

KONDO, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1118-1122

[9]

MAGEE CW, 1981, EL SOC EXT ABSTR, V81, P880

[10] MULTI-WAFER GROWTH SYSTEM FOR LOW-PRESSURE SILICON EPITAXY [J].

OGIRIMA, M ;

SAIDA, H ;

SUZUKI, M ;

MAKI, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1879-1881

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