BORON AUTODOPING DURING SILANE EPITAXY

被引：20

作者：

LANGER, PH

GOLDSTEIN, JI

机构：

[1] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

[2] LEHIGH UNIV, BETHLEHEM, PA 18015 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 04期

关键词：

D O I：

10.1149/1.2133356

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：591 / 598

页数：8

共 20 条

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[3] EFFECT OF TRACE AMOUNTS OF WATER VAPOR ON BORON DOPING IN EPITAXIALLY GROWN SILICON [J].

BLOEM, J .

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[4] A KINETIC THEORY FOR AUTODOPING FOR VAPOR PHASE EPITAXIAL GROWTH OF GERMANIUM [J].

GROSSMAN, JJ .

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[5] IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH [J].

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RODER, A ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) :802-&

[6] IMPURITY REDISTRIBUTION PROCESSES IN EPITAXIAL SILICON LAYERS [J].

JOYCE, BA ;

WEAVER, JC ;

MAULE, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) :1100-&

[7]

KATZ LE, 1974, MAY EL SOC M SAN FRA

[8]

Kendall D. L., 1969, Semiconductor silicon, P358

[9] IMPURITY REDISTRIBUTION DURING SILICON EPITAXIAL-GROWTH AND SEMICONDUCTOR-DEVICE PROCESSING [J].

LANGER, PH ;

GOLDSTEIN, JI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) :563-571

[10] CALCULATIONS OF CUTOFF FREQUENCY BREAKDOWN VOLTAGE AND CAPACITANCE FOR DIFFUSED JUNCTIONS IN THIN EPITAXIAL SILICON LAYERS [J].

LEE, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :881-+

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