BECQUEREL EFFECT SOLAR CELL

[1] SHALLOW HOLE LEVELS IN ION-IMPLANTED CDS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5125 - &

[2] Becquerel E, 1839, CR HEBD ACAD SCI, V9, P561

[3] HOLE INJECTION AND SURFACE STATE EFFECTS AT GALLIUM-ARSENIDE ELECTRODES [J]. SURFACE SCIENCE, 1973, 40 (01) : 141 - 148

[4] EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01): : 129 - 176

[5] VAPOR-DEPOSITED THIN-FILM PIEZOELECTRIC TRANSDUCERS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (04) : 506 - &

[6] FUNDAMENTAL ABSORPTION EDGE IN CADMIUM SULFIDE [J]. PHYSICAL REVIEW, 1958, 112 (03): : 785 - 792

[7] ERDEYGRUZ T, 1970, J ELECTROCHEM SOC, V117, P165

[8] ERDEYGRUZ T, 1972, KINETICS ELECTRODE P, P441

[9] FRANCOMBE MH, 1963, T NATL VACUUM S, V10, P316

[10] ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J]. NATURE, 1972, 238 (5358) : 37 - +

[1] SHALLOW HOLE LEVELS IN ION-IMPLANTED CDS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5125 - &

[2] Becquerel E, 1839, CR HEBD ACAD SCI, V9, P561

[3] HOLE INJECTION AND SURFACE STATE EFFECTS AT GALLIUM-ARSENIDE ELECTRODES [J]. SURFACE SCIENCE, 1973, 40 (01) : 141 - 148

[4] EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01): : 129 - 176

[5] VAPOR-DEPOSITED THIN-FILM PIEZOELECTRIC TRANSDUCERS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (04) : 506 - &

[6] FUNDAMENTAL ABSORPTION EDGE IN CADMIUM SULFIDE [J]. PHYSICAL REVIEW, 1958, 112 (03): : 785 - 792

[7] ERDEYGRUZ T, 1970, J ELECTROCHEM SOC, V117, P165

[8] ERDEYGRUZ T, 1972, KINETICS ELECTRODE P, P441

[9] FRANCOMBE MH, 1963, T NATL VACUUM S, V10, P316

[10] ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J]. NATURE, 1972, 238 (5358) : 37 - +