SHALLOW HOLE LEVELS IN ION-IMPLANTED CDS

被引：6

作者：

ANDERSON, WW

SWANSON, RM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.1659902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5125 / &

共 20 条

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J].

ANDERSON, WW ;

MITCHELL, JT .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :334-&

[2]

AVEN M, 1967, 2 6 SEMICONDUCTING C, P1232

[3] HIGH CONDUCTIVITY P-TYPE CDS [J].

CHERNOW, F ;

ELDRIDGE, G ;

RUSE, G ;

WAHLIN, L .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :339-&

[4] TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION [J].

DONNELLY, JP ;

FOYT, AG ;

HINKLEY, ED ;

LINDLEY, WT ;

DIMMOCK, JO .

APPLIED PHYSICS LETTERS, 1968, 12 (09) :303-&

[5]

DUNLAP HL, UNPUBLISHED REPORT

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HOPFIELD, JJ ;

THOMAS, DG .

PHYSICAL REVIEW, 1961, 122 (01) :35-&

[7] PHOTOELECTRONIC PROPERTIES OF ION-IMPLANTED CDS [J].

HOU, SL ;

MARLEY, JA .

APPLIED PHYSICS LETTERS, 1970, 16 (11) :467-&

[8] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE [J].

HOU, SL ;

BECK, K ;

MARLEY, JA .

APPLIED PHYSICS LETTERS, 1969, 14 (05) :151-&

[9] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J].

HUNSPERGER, RG ;

MARSH, OJ ;

MEAD, CA .

APPLIED PHYSICS LETTERS, 1968, 13 (09) :295-+

[10] EVIDENCE FOR HOLE TRAPS IN CDS CRYSTALS [J].

IM, HB ;

MATTHEWS, HE ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2751-&

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