SYNTHESIS OF SEMIINSULATING GAAS BY AS IMPLANTATION AND THERMAL ANNEALING - STRUCTURAL AND ELECTRICAL-PROPERTIES

被引：8

作者：

CLAVERIE, A

FUJIOKA, H

LAANAB, L

LILIENTALWEBER, Z

WEBER, ER

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

[2] MSD,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00511-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High dose As implantation in GaAs followed by annealing at 600 degrees C results in the formation of semi-insulating GaAs layers. These layers are relaxed with a homogeneous distribution of metallic As precipitates similarly to what is observed in GaAs grown by molecular beam epitaxy at about 200 degrees C (LT-MBE-GaAs), after annealing at 600 degrees C. By selecting the implantation parameters it is possible to adjust the thickness of the subsequent SI layer and to monitor the amount of excess As in the crystal. By selecting the annealing temperature it is possible to fabricate either a material very similar to the as-grown LT-MBE-GaAs or a material similar to annealed LT-MBE-GaAs.

引用

页码：327 / 330

页数：4

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