PLASMALESS CLEANING PROCESS OF SILICON SURFACE USING CHLORINE TRIFLUORIDE

被引：18

作者：

SAITO, Y

YAMAOKA, O

YOSHIDA, A

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasmaless etching using ClF3 gas around room temperature has been investigated for the silicon substrates with the various thicknesses of native oxide. The native oxide can be removed with ClF3 gas. A specular surface is obtained by ultraviolet light irradiation which remarkably accelerates the removal of the native oxide without changing the etch rate of silicon. The etched surface is analyzed with Auger electron measurement, indicating the existence of Cl atoms on it.

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页码：1119 / 1121

页数：3

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