MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSES OF NITROGEN AND OXYGEN

被引：16

作者：

NESBIT, L

SLUSSER, G

FRENETTE, R

HALBACH, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 06期

关键词：

D O I：

10.1149/1.2108816

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1186 / 1190

页数：5

共 17 条

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[10] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].

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STOEMENOS, J ;

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