RECTIFYING PROCESS IN SURFACE BARRIER DETECTORS

被引：23

作者：

SIFFERT, P

COCHE, A

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1964年 / NS11卷 / 03期

关键词：

D O I：

10.1109/TNS.1964.4323429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：244 / +

页数：1

共 10 条

[1]

AMSEL G, 1963, THESIS PARIS

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[3] PROPERTIES OF METAL TO GERMANIUM CONTACTS [J].

BOCCIARELLI, CV .

PHYSICA, 1954, 20 (11) :1020-1025

[4] RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS [J].

BORNEMAN, EH ;

SCHWARZ, RF ;

STICKLER, JJ .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (08) :1021-1028

[5]

BRATTAIN J, UNPUBLISHED WORK

[6]

INSKEEP CN, 1963, S NUCLEAR ELECTRONIC

[7] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].

JORGENSEN .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&

[8] CONTACT POTENTIAL DIFFERENCE IN SILICON CRYSTAL RECTIFIERS [J].

MEYERHOF, WE .

PHYSICAL REVIEW, 1947, 71 (10) :727-735

[9] SURFACE BARRIER EFFECTS IN ADSORPTION, ILLUSTRATED BY ZINC OXIDE [J].

MORRISON, SR .

ADVANCES IN CATALYSIS, 1955, 7 :259-301

[10] ANODIC FORMATION OF OXIDE FILMS ON SILICON [J].

SCHMIDT, PF ;

MICHEL, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) :230-236

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