ELECTRON-VELOCITY OVERSHOOT OBSERVED IN AN IMPULSE-EXCITED GAAS PHOTOCONDUCTOR

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 371 - 373

[2] IMPULSE-RESPONSE OF PHOTOCONDUCTORS IN TRANSMISSION-LINES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) : 639 - 648

[3] ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 209 - 210

[4] MONTE-CARLO SIMULATION OF REFLECTING CONTACT-BEHAVIOR ON BALLISTIC DEVICE SPEED [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 332 - 334

[5] Grubin H. L., 1981, International Electron Devices Meeting, P633

[6] HESS K, 1982, ADV ELECTRON EL PHYS, V59, P239

[7] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 937 - 940

[8] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &

[9] INFLUENCE OF NONUNIFORM FIELD DISTRIBUTION ON FREQUENCY LIMITS OF GAAS FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1976, 12 (23) : 615 - 616

[10] INVESTIGATION OF TRANSIENT ELECTRONIC TRANSPORT IN GAAS FOLLOWING HIGH-ENERGY INJECTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1906 - 1911

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 371 - 373

[2] IMPULSE-RESPONSE OF PHOTOCONDUCTORS IN TRANSMISSION-LINES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) : 639 - 648

[3] ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 209 - 210

[4] MONTE-CARLO SIMULATION OF REFLECTING CONTACT-BEHAVIOR ON BALLISTIC DEVICE SPEED [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 332 - 334

[5] Grubin H. L., 1981, International Electron Devices Meeting, P633

[6] HESS K, 1982, ADV ELECTRON EL PHYS, V59, P239

[7] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 937 - 940

[8] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &

[9] INFLUENCE OF NONUNIFORM FIELD DISTRIBUTION ON FREQUENCY LIMITS OF GAAS FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1976, 12 (23) : 615 - 616

[10] INVESTIGATION OF TRANSIENT ELECTRONIC TRANSPORT IN GAAS FOLLOWING HIGH-ENERGY INJECTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1906 - 1911