HIGH PHOTOCONDUCTIVE GAIN IN GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE DETECTORS OPERATING AT GAMMA-= 1.3 MU-M

被引：23

作者：

TEMKIN, H

BEAN, JC

PEARSALL, TP

OLSSON, NA

LANG, DV

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期

关键词：

D O I：

10.1063/1.97209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：155 / 157

页数：3

共 11 条

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APPLIED PHYSICS LETTERS, 1985, 46 (04) :379-381

[6] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

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[7] WAVE-GUIDE INFRARED PHOTODETECTORS ON A SILICON CHIP [J].

LURYI, S ;

PEARSALL, TP ;

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BEAN, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :104-107

[8] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J].

PEARSALL, TP ;

TEMKIN, H ;

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LURYI, S .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :330-332

[9] INDIRECT BAND-GAP OF COHERENTLY STRAINED GEXSI1-X BULK ALLOYS ON (001) SILICON SUBSTRATES [J].

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[10]

Rose A, 1963, CONCEPTS PHOTOCONDUC

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