THE EFFECT OF STRONG LOCALIZATION ON THE MOBILITY OF ELECTRONS IN MODULATION-DOPED INVERTED STRUCTURES

被引：6

作者：

AIRAKSINEN, VM ^{[1
]}

HARRIS, JJ ^{[1
]}

LACKLISON, DE ^{[1
]}

BEALL, RB ^{[1
]}

HILTON, D ^{[1
]}

FOXON, CT ^{[1
]}

BATTERSBY, SJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1151 / 1155

页数：5

共 24 条

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[9]

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